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SUMMARY:ECE Seminar Series in Advanced Semiconductor Materials and Devices - Sebastian Fernández
DESCRIPTION:4610 Engineering Hall \n\n\n\nEnabling Perovskite Semiconductors for a Brighter\, Safer\, and Efficient World\n\n\n\nAbstract: Light-emitting diodes (LEDs) have enabled critical functionality across a range of applications\, including solid-state lighting\, displays\, water purification\, 3D printing\, sensing\, and more. Metal halide perovskite semiconductors are promising candidates for next-generation optoelectronic devices\, including LEDs\, due to their bandgap tunability\, sharp color purity\, and inexpensive processing. In this seminar\, I will present my research towards optimizing the performance of emissive perovskite semiconductors in both the visible and ultraviolet (UV) spectrum. Focusing first on the visible spectrum\, by replacing a portion of the lead with manganese and introducing tris(4-fluorophenyl)phosphine oxide (TFPPO) as an additive in organic-inorganic hybrid quasi-bulk perovskite thin films\, we can achieve bright and efficient perovskite LEDs (PeLEDs). However\, while the TFPPO additive boosts green Mn 2+ -doped PeLED efficiency\, it also worsens its device stability. By utilizing repeated electrical scans and time-resolved photoluminescence measurements\, we systematically study this efficiency-stability trade-off. Next\, we employ emissive 2D lead halide perovskites to push light emission towards the UV spectrum. By engineering the films and corresponding device architectures\, we can fabricate both 408 nm violet- emitting and 399 nm UV-emitting PeLEDs. Furthermore\, to achieve deeper UV light emission\, one must consider other materials beyond 2D lead halide perovskites. By investigating lead-free rare earth element-based perovskite materials\, we show that cerium-based perovskite films can demonstrate 367 nm photoluminescent emission paving the way for deeper UV-emitting PeLEDs. Lastly\, by combining organic spacer cations and europium halides\, we showcase bright\, lead-free perovskite nanoplatelets and enable new non-toxic pathways for both deep blue and violet light emission. Finally\, I will share my vision for engineering next-generation perovskite optoelectronic and electronic devices for applications in displays\, public health\, quantum computing\, microelectronics\, and beyond. \n\n\n\nBio:Sebastian Fernández is a Stanford Diversifying Academia\, Recruiting Excellence (DARE) Fellow\, U.S. Department of Energy IBUILD Fellow\, P. Michael Farmwald Stanford Graduate Fellow in Science & Engineering\, GEM Fellow\, and Ph.D. Candidate in the Department of Electrical Engineering at Stanford University. Previously\, Sebastian received his B.S. in Electrical Engineering with a minor in Mathematics from the Georgia Institute of Technology in 2019 and M.S. in Electrical Engineering from Stanford University in 2021. \n\n\n\nSebastian Fernandez\n\n\n\nSebastian is passionate about teaching and has led his own Differential Equations recitation five times as a Georgia Tech undergraduate as well as uploading his lectures on YouTube and amassing over 350\,000 views. Additionally\, Sebastian has broadened participation within engineering by serving as the vice-chair of the Stanford School of Engineering’s Dean’s Graduate Student Advisory Council and co-founding the Stanford Engineering Research Introductions Organization\, which he leads as president to prepare underrepresented undergraduate students for graduate school. Sebastian’s contributions have been recognized with several honors\, including the 2024 Winner of the University of Washington Chemical Engineering Distinguished Young Scholars Seminar (DYSS) Series\, University of California\, Berkeley Electrical Engineering & Computer Sciences BETR Solid State Technology and Devices Seminar Speaker\, University of Illinois Urbana-Champaign Materials Science & Engineering Hard Materials Seminar Speaker\, Rising Star in Materials Science and Engineering (MIT\, Stanford\, UIUC\, and CMU)\, Northwestern University Materials Science and Engineering Future Leader and Department Seminar Speaker\, University of Wisconsin-Madison WiscProf Selectee\, NextProf Nexus Selectee (UC Berkeley\, Georgia Tech\, and UMichigan)\, Cadence LatinX Student in Technology Scholarship Winner\, and the Georgia Institute of Technology Undergraduate Teaching Assistant of the Year Winner.
URL:/event/ece-seminar-series-in-advanced-semiconductor-materials-and-devices-sebastian-fernandez/
LOCATION:4610 Engineering Hall\, 1415 Engineering Drive\, Madison\, 53711
CATEGORIES:Electrical & Computer Engineering
ATTACH;FMTTYPE=image/jpeg:/wp-content/uploads/2025/02/Rising-Stars-Seminars-Plain-1.avif
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CREATED:20250318T161826Z
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UID:10001216-1742990400-1742994000@engineering.wisc.edu
SUMMARY:ECE Seminar Series in Advanced Semiconductor Materials and Devices - Dr. Kuangye Lu
DESCRIPTION:4610 Engineering Hall \n\n\n\nSeamless Monolithic 3D Heterogeneous Integration Enabled by Advanced Epitaxy\n\n\n\nAbstract:Three-dimensional heterogeneous integration (3D heterointegration) is emerging as the leading approach to enhancing performance in the field of microelectronics. However\, this method often relies on complex wafer-to-wafer bonding processes\, which introduce alignment challenges and interfacial defects. Alternatively\, heteroepitaxy offers another route for implementing 3D heterointegration but suffers from material degradation due to defects and strain caused by lattice and thermal mismatches.In this talk\, I will introduce three new epitaxy paradigms designed to address the key limitations of current 3D heterointegration processes. First\, I will discuss Remote Epitaxy\, which enables wafer-scale exfoliation of ultra-thin membranes across a broad range of materials. By leveraging a 2D interlayer\, these membranes can be transferred and monolithically 3D (M3D) integrated onto arbitrary substrates with ultra-high throughput and low cost\, effectively addressing the challenges associated with wafer-to-wafer bonding. I will then present Remote Heteroepitaxy\, a technique that significantly reduces defect density in heteroepitaxy utilizing strain relaxation mechanism at the 2D/3D interface. This advancement enhances materials quality and device performance over conventional heteroepitaxy\, broadening opportunities for M3D heterointegration. Lastly\, I will introduce single-crystal materials growth on amorphous substrates\, which is made possible with a bold substrate design and carefully engineered materials growth conditions\, offering an entirely new scheme of M3D heterointegration.Building on these epitaxy paradigms\, I will demonstrate various novel (opto)electronic devices as examples of their applications\, including fabrication of world’s smallest micro-LED pixels and accurate placement of laser coupons on photonic circuits (based on Remote Epitaxy)\, defect-free direct growth of III-V on silicon for next-generation transistor applications (based on Remote Heteroepitaxy)\, and advanced 3D stacking of 2D transistors (based on single-crystal materials growth on amorphous substrates). I will conclude the talk with a perspective on future materials development that could enable diverse innovations across advanced 3D logic/memory\, XR\, quantum information\, and beyond\, driven by new devices leveraging advancements in M3D heterointegration. \n\n\n\nKuangye Lu\n\n\n\nBio:Dr. Kuangye Lu is currently a Postdoctoral Associate at the Research Laboratory of Electronics\, Massachusetts Institute of Technology (MIT). He earned his Ph.D. in Mechanical Engineering from MIT in 2023 under the supervision of Prof. Jeehwan Kim and received his B.S. with honors in Physics from Zhejiang University (ZJU) in 2018.His research focuses on the invention and development of advanced epitaxy techniques for compound semiconductor and 2D materials\, as well as their heterointegration for device fabrication and applications\, including monolithic 3D integration of high-quality III-V and III-N optoelectronic devices on silicon\, transistors designed for next-generation advanced nodes\, and reconfigurable AI chips.Dr. Lu has authored peer-reviewed articles in high-impact journals\, including Nature\, Nature Nanotechnology\, and Nature Electronics. He is also the recipient of the Chu Ko-Chen Scholarship\, the highest honor for graduates of ZJU\, and the MIT Shangzhi Wu Fellowship. Additionally\, Dr. Lu has served as a conference organizer of AEFM (Advanced Epitaxy of Freestanding Membranes and 2D Materials Conference) and a Review Editor for Frontiers in Energy Research. He is also a reviewer for various journals including Nature Chemical Engineering\, Science Advances\, and Nano Letters.
URL:/event/ece-seminar-series-in-advanced-semiconductor-materials-and-devices-dr-kuangye-lu/
LOCATION:4610 Engineering Hall\, 1415 Engineering Drive\, Madison\, 53711
CATEGORIES:Electrical & Computer Engineering,Seminar
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